NON-VOLATILE MEMORY DEVICE AND ERASE METHOD OF THE SAME

摘要

PURPOSE: A non-volatile memory device and an erase method of the same are provided to perform the erase operation of cell transistors by applying voltages through the gates of a non-volatile memory cell transistors and a semiconductor substrate. CONSTITUTION: Semiconductor substrates(312, 314) are successively stacked. Non-volatile memory cell transistors(TM1_1, TM2_1, TM3_1, TM4_1) are respectively formed in a row on the upper side of the semiconductor substrates. A plurality of word-lines is connected to a plurality of the non-volatile memory cell transistors. A plurality of non-volatile memory cells formed on each semiconductor substrate is grouped into two or more memory cell blocks. A first voltage is applied to a semiconductor substrate which belongs to a memory cell block to be erased.