| 摘要 |
PURPOSE: A manufacturing method of a flash memory device is provided to form a cobalt silicide layer with a uniform thickness by vertically diffusing the cobalt by forming the cobalt on the top of a control gate using a damascene method. CONSTITUTION: A second conductive pattern(208a) and gate lines including a gate mask pattern are formed on the top of a semiconductor substrate(200). An interlayer insulating film(214) is filled with between gate lines. A trench in which the top of the second conductive pattern is exposed is formed by eliminating the gate mask pattern. A cobalt film(216) is filled inside the trench. A cobalt silicide layer is formed on the outcome by executing a rapid thermal process. The gate mask pattern is formed to a nitride film.
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