发明名称 RESISTIVE ELEMENT FOR HIGH-VOLTAGE SEMICONDUCTOR RESISTOR
摘要 FIELD: physics; semiconductors. ^ SUBSTANCE: invention relates to semiconductor devices and can be used in designing high-voltage semiconductor resistors with given relationship of their resistance to applied voltage. The resistive element of a high-voltage semiconductor resistor is made from a monocrystalline semiconductor with given type of conductivity, in which there are near-contact zones, ohmic contacts and there is protection of the peripheral contour from surface breakdown. Thickness of the resistive element (L3) is determined using defined ratios. ^ EFFECT: design of resistive elements of high-voltage semiconductor resistors in which relative variation of resistance (dRu), when applied voltage varies within a given range does not exceed a given value dRu3). ^ 1 tbl
申请公布号 RU2382438(C1) 申请公布日期 2010.02.20
申请号 RU20080136032 申请日期 2008.09.05
申请人 OAO "EHLEKTROVYPRJAMITEL'" 发明人 GEJFMAN EVGENIJ MOISEEVICH;CHIBIRKIN VLADIMIR VASIL'EVICH;GARTSEV NIKOLAJ ALEKSANDROVICH;MAKSUTOVA SANIJA ABDRASHITOVNA;BATJAEV PAVEL JUR'EVICH;MERKULOVA OLESJA VLADIMIROVNA
分类号 H01L29/8605 主分类号 H01L29/8605
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