发明名称 |
RESISTIVE ELEMENT FOR HIGH-VOLTAGE SEMICONDUCTOR RESISTOR |
摘要 |
FIELD: physics; semiconductors. ^ SUBSTANCE: invention relates to semiconductor devices and can be used in designing high-voltage semiconductor resistors with given relationship of their resistance to applied voltage. The resistive element of a high-voltage semiconductor resistor is made from a monocrystalline semiconductor with given type of conductivity, in which there are near-contact zones, ohmic contacts and there is protection of the peripheral contour from surface breakdown. Thickness of the resistive element (L3) is determined using defined ratios. ^ EFFECT: design of resistive elements of high-voltage semiconductor resistors in which relative variation of resistance (dRu), when applied voltage varies within a given range does not exceed a given value dRu3). ^ 1 tbl |
申请公布号 |
RU2382438(C1) |
申请公布日期 |
2010.02.20 |
申请号 |
RU20080136032 |
申请日期 |
2008.09.05 |
申请人 |
OAO "EHLEKTROVYPRJAMITEL'" |
发明人 |
GEJFMAN EVGENIJ MOISEEVICH;CHIBIRKIN VLADIMIR VASIL'EVICH;GARTSEV NIKOLAJ ALEKSANDROVICH;MAKSUTOVA SANIJA ABDRASHITOVNA;BATJAEV PAVEL JUR'EVICH;MERKULOVA OLESJA VLADIMIROVNA |
分类号 |
H01L29/8605 |
主分类号 |
H01L29/8605 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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