| 摘要 |
FIELD: physics; semiconductors. ^ SUBSTANCE: invention relates to production of optoelectronic devices, specifically to production of matrix charge-coupled photosensitive devices. The matrix charge-coupled photosensitive device has a horizontal shift register, an output device, aluminium buses at the periphery, photosensitive cells based on photodiodes and vertical shift registers. The vertical shift registers are made from a three-phase circuit in two polysilicon layers, where in one cell, phase 1 and phase 3 are made in the first polysilicon layer, and phase 2 in the second polysilicon layer, while in the adjacent cell phase 1 and phase 3 are made in the second polysilicon layer, and phase 2 in the first polysilicon layer. Phase 2 is in contact with an aluminium bus which covers the vertical shift register, and phase 1 and phase 3 are lead out to the periphery through polysilicon buses in contact with the aluminium buses. ^ EFFECT: design of a matrix charge-coupled device with a more compact structure owing to the structure of the cells and large charge capacity of the register. ^ 1 dwg |
