| 摘要 |
FIELD: physics; semiconductors. ^ SUBSTANCE: invention can be used in production of semiconductor devices. In the method of preparing a semiconductor structure on a silicon wafer an n+ type layer is formed on which an epitaxial n type layer is grown. Further, in the n+ layer, a double layer porous structure with different density is created, the upper layer having pore size from 2 to 8 nm and the lower layer having pore size two orders larger, through successive variation of current density from 30 mA/cm2 to 45 mA/cm2 with subsequent application of a three-stage oxidation mode: at temperature 300-400C for one hour in dry oxygen; at temperature 800-900C for two hours in dry oxygen; at temperature 1000-1100C for one hour in wet oxygen. ^ EFFECT: reduced density of defects in semiconductor structures which provides for technological effectiveness, improved parametres, increased reliability and increased percentage yield. ^ 1 tbl, 2 ex |
