| 摘要 |
PURPOSE: A magnetic random access memory device and a method for writing and reading the data are provided to lower the critical current density while minimizing an MR value by storing and reproducing the data by changing the magnetization direction of a free layer. CONSTITUTION: A magnetic random access memory device includes a fixing layer(12), a first non-magnetic layer(13), a data storing data(14), a second nonmagnetic layer(15), and a free layer(16). The magnetization direction of the fixing layer is fixed by a semis to the pinned layer, the magnetization direction is fixed by the anti- ferroelectric material layer(11). The first nonmagnetic layer is formed on the fixing layer. The data storing layer is formed on the first nonmagnetic layer. The second nonmagnetic layer is formed on the data storing layer. The free layer is formed on the second nonmagnetic layer. The free layer changes the magnetization direction. |
