| 摘要 |
PURPOSE: A semiconductor device and a method for forming a metal wiring of the semiconductor device are provided to prevent a step due to dishing in the contact plug. CONSTITUTION: A first insulation layer(206a) is formed in an upper side of a semiconductor substrate(202) including a junction area. A plurality of contact plugs(208) are formed on the first insulation layer. The lower end of the contact plug is connected to the junction area. The upper end of the contact plug is higher than the first insulation layer. An etching stop layer(210) and a second insulation layer are formed on the first insulation layer including the contact plug. The second insulation layer and the etching stop layer are etched to expose the contact plug. A trench insulation pattern(214a) to expose the contact plug is formed on the second insulation layer including the contact plug. A metal wiring(226) is made by forming the conductive material on the opening unit of the trench insulation layer.
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