| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase a grain size of a CVD tungsten film by enhancing the adhesion between an amorphous metal silicide layer and the CVD tungsten film. CONSTITUTION: A contact plug(322) connected to a junction region of a transistor by passing through an interlayer insulation layer(318) is formed on a semiconductor substrate(310). The contact plug and the interlayer insulation layer are formed on a barrier metal layer(324). An amorphous metal silicide layer(328) is formed on the barrier metal layer. A PVD tungsten layer(330) is formed on the amorphous metal silicide layer. A CVD tungsten layer(332) is formed on the PVD tungsten layer. The CVD tungsten layer, the PVD tungsten layer, the amorphous metal silicide layer and the barrier metal layer are successively etched.
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