METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to secure reliability and stability of the semiconductor device by forming the layer to be etched with a required shape. CONSTITUTION: A planarization layer is formed thicker than a step on a layer(21) to be etched. A hard mask film pattern(23A) is formed on the planarization layer. The planarization layer is etched using the hard mask film pattern as the etching barrier layer. The layer with the step is etched using the etched planarization layer as the etching barrier.