| 摘要 |
PURPOSE: A vertical structure group 3 nitride-based semiconductor light emitting diode and a manufacturing method thereof are provided to separate a light emitting structure for a light emitting diode device from a growth substrate without the thermal and mechanical damage. CONSTITUTION: A light emitting structure(402) is comprised of a n-type nitride-based clad layer, a nitride-based active layer, and a p type nitride-based clad layer. A p type ohmic contact electrode layer and a first device passivation layer include a current blocking area formed in a lower side of the light emitting structure. A reflective ohmic contact electrode layer is formed in the lower side of the p type ohmic contact electrode layer and the first device passivation layer. A conductive wafer bonding layer is formed in the lower side of the reflective ohmic electrode layer. A second device passivation layer surrounds the light emitting structure, the p type ohmic contact electrode layer, the first device passivation layer, the reflective ohmic contact electrode layer, and the conductive wafer bonding layer. A heat sink support(403) is formed in the lower side of the conductive wafer bonding layer. A p type ohmic contact electrode structure(406) and a die bonding layer are formed in the lower side of the heat sink support. |
