| 摘要 |
PURPOSE: A semiconductor memory device including a capacitor and a method for forming the same are provided to minimize power consumption by supplying a voltage to a plate electrode in only part of cells. CONSTITUTION: A semiconductor memory device includes a pair of insulation line patterns(120), a plurality of storage nodes(114a), a plate line pattern(124a), and a capacitor dielectric layer(122). The insulation line patterns are extended on the substrate along one direction. The storage nodes are arranged on the substrate between the insulation line patterns. The storage nodes form a first row and a second row in one direction. The plate line pattern is arranged between the insulation line patterns and is extended along one direction. The plate line pattern covers the surface of the storage nodes. The capacitor dielectric layer is interposed between the plate line pattern and the storage nodes.
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