| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory is provided to prevent the warpage of an active region by suppressing the tension of an air gap by the pressure of a photoresist layer. CONSTITUTION: A gate insulation layer, a conductive layer, and a hard mask layer are formed on a semiconductor substrate(200). The hard mask layer, the conductive layer, and the gate insulation layer are patterned in the cell region. A first trench(Tc) is formed by etching a semiconductor substrate. A photoresist pattern with the pattern of a peripheral circuit region is formed in an upper side of the first trench and the hard mask layer. The hard mask layer, the conductive layer, and the gate insulation layer are patterned along the photoresist pattern. A second trench is formed by etching the semiconductor substrate.</p> |
