发明名称 |
METHOD FOR DIVIDING OF MONOCRYSTALLINE LAYERS, DISKS OR WAFERS |
摘要 |
<p>The method involves pre-adjusting a crystallographic cleavage plane (2') with respect to a cleaving device, and predetermining stress intensity via stress fields (3', 4'). An energy release rate for the predetermined stress fields is determined during a crack growth in dependence of a possible angle of deflection (alpha) from the cleavage plane. The stress fields are generated, and the stress fields are controlled or regulated and/or pre-adjusted such that crack propagation takes place in a monocrystal e.g. gallium arsenide monocrystal.</p> |
申请公布号 |
EP2106331(A1) |
申请公布日期 |
2009.10.07 |
申请号 |
EP20080850859 |
申请日期 |
2008.11.14 |
申请人 |
FREIBERGER COMPOUND MATERIALS GMBH |
发明人 |
HAMMER, RALF;JURISCH, MANFRED |
分类号 |
B28D5/00;H01L21/78 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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