| 摘要 |
<p>PURPOSE: A mask pattern of a semiconductor device and a method for manufacturing the semiconductor device using the same are provided to prevent pattern breakdown in a region adjacent to a well pickup region and a cell region by securing DOF(Depth Of Focus) margin. CONSTITUTION: A mask pattern of a semiconductor device includes a cell region pattern(100A) and a well pickup region pattern(200A). The cell region pattern is formed with a plurality of line shapes with the constant thickness and interval. The well pickup region pattern is adjacent to the cell region pattern. The upper and lower parts of the well pickup region pattern have unevenness with the constant thickness and interval. The middle of the well pickup region pattern is a square.</p> |
