发明名称 |
SEMICONDUCTOR HAVING SPIN-ON-GLASS ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY |
摘要 |
<p>Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.</p> |
申请公布号 |
EP1190277(B1) |
申请公布日期 |
2009.10.07 |
申请号 |
EP20000941275 |
申请日期 |
2000.06.08 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
SPEAR, RICHARD;HACKER, NIGEL, P.;BALDWIN, TERESA;KENNEDY, JOSEPH |
分类号 |
G03F7/004;G03F7/09;C03C17/00;C03C17/30;C07F7/18;C08G77/14;C08G77/50;C08K5/00;C09D7/12;C09D183/04;C09D183/06;C09D183/08;G03C1/492;G03F7/075;G03F7/11;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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