| 摘要 |
<p>PURPOSE: An exposure mask and a method for forming a semiconductor device are provided to form a frame item of a scribe lane region and a cell pattern of a cell array region stably even through many exposure masks are used. CONSTITUTION: An exposure mask includes a cell pattern and a light transmission unit. The cell pattern is formed in a cell array region(A). The light transmission unit is formed in a scribe lane region(B). An amorphous carbon hard mask layer and a first photoresist layer are coated on an upper side of a layer(20) of a semiconductor substrate(W). A first photoresist pattern is formed using the exposure mask. The hardened photoresist pattern is formed by hardening the first photoresist pattern. A second photoresist pattern is coated on the amorphous carbon hard mask layer and the hardened photoresist pattern. A second photoresist pattern is formed using the exposure mask. A hard mask pattern(21a,21b) is formed by etching the amorphous carbon hard mask layer using the second photoresist pattern as the etching mask.</p> |
