| 摘要 |
PURPOSE: A methods of forming a shallow base region of a bipolar transistor is provided to solve the complexity of an implanting process and costs by injecting dopant with high energy. CONSTITUTION: A methods of forming a shallow base region of a bipolar transistor is comprised of the steps: forming a first insulation layer(205)(1) on a first layer which is doped by a first dopant; forming the first floors on the substrate; changing the thickness of the first insulation layer based on a target dopant profile; and injecting the dopant of the first types into the first layer. Selection energy, based on target dopant profile and changed thickness of the first insulating layer, is inserted into the dopant.
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