| 摘要 |
Plasma density generated inside the processing chamber of a plasma processing apparatus is adjusted especially in a circumference direction. In a plasma processing apparatus (1), a microwave supplied from a coaxial waveguide (30) is introduced into a processing container (2) through a slow-wave plate (25), a processing gas is brought into the plasma state and a substrate (W) is processed in the processing container (2). A dielectric member is arranged at a connecting area between the coaxial waveguide (30) and the slow-wave plate (25). The dielectric member is arranged at a part in the circumference direction with an internal conductor (31) at the center, in an external conductor (32) of the coaxial waveguide (30). The dielectric member is arranged at a discretionary position in the circumference direction with the internal conductor (31) at the center.
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