| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a first and a second latch-up prevention regions without an additional process by simultaneously performing a process for forming the latch-up prevention regions while the well of a low voltage transistor is formed. CONSTITUTION: A first conductive well(110) is formed on a semiconductor substrate(100). Element isolation layers(120, 122, 124, 126, 128) are formed on the first conductive well. A gate pattern(150) is formed on the upper side of the first conductive well. Second drift regions are formed on the both side of the gate pattern. Second conductive source and drain regions are formed in the second conductive drift regions. A bias voltage is applied to pick-up regions(190, 192). Conductive latch-up prevention regions(140, 142) are formed on the lower side of the pick-up regions.</p> |
