Optically pumped semiconductor devices for generating radiation, fabrication of the same and method for compensating tensions within their layer sequences

摘要

The semiconductor layer sequence has one or more layers produces by the use of tertiary butyl arsine and/or tertiary butyl phosphine sources in a conventional epitaxial process. The at least one layer is implemented as a strain compensating layer for the surrounding or layer(s) of the semiconductor device. Independent claims are also included for the following: (A) optically pumped semiconductor devices for generating radiation (B) and a method of manufacturing semiconductor layer structures (C) the use of TBAs or/and TBP sources for epitaxial processes for manufacturing strain compensating semiconducting layers.