PHOTOELECTRIC TRANSDUCER AND ITS MANUFACTURING METHOD

摘要

Photoelectric transducer has a first electrode on which a semiconductor layer on which a sensitizing dye is supported, is deposited, a second electrode which opposes the semiconductor layer of the first electrode, and an electrolyte layer arranged between the semiconductor layer and the second electrode. The semiconductor layer includes semiconductor particles and a binder, and the porosity of the semiconductor layer is 40-80%. An independent claim is also included for the manufacture of the photoelectric transducer by coating a solution including semiconductor particles and a binder on a first electrode, drying and pressing at 20-200 MPa to form a semiconductor layer.