Chemical mechanical polishing composition and methods relating thereto

摘要

A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt% colloidal silica abrasive particles having an average particle size of ‰¤ 50 nm; and 0 to 5 wt% quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.