SCHOTTKY BARRIER DIODE

摘要

A Schottky barrier diode (1) includes a GaN freestanding substrate (2) having a front surface (2a), a GaN epitaxial layer (3) deposited on the front surface (2a), and an insulation layer (4) deposited on the GaN epitaxial layer (3) at a front surface (3a) and having an opening. Furthermore, the Schottky barrier diode (1) also includes an electrode (5). The electrode (5) is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer (3), and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer (4). The GaN freestanding substrate (2) has a dislocation density of at most 1 × 10 8 cm -2 .