| 摘要 |
<p>PURPOSE: A semiconductor integrated circuit device is provided to extend the lifetime of a battery by reducing a gate tunnel leakage current and GIDL current. CONSTITUTION: An inverter circuit(INV102) comprises a P channel MOS(Metal Oxide Semiconductor) transistor(MP102) and a N channel MOS transistor(MN102). A gate electrode, a drain electrode, and a source electrode of the P channel MOS transistor are connected to an input signal, a connection node, and a power voltage, respectively. A gate electrode, a drain electrode, and a source electrode of the N channel MOS transistor are connected to an input signal, a connection node, and a connection source electrode, respectively.</p> |
