发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
PURPOSE: A plasma processing device and a processing method thereof are provided to easily perform a plasma process by controlling a magnetic field according to the kind of the plasma process. CONSTITUTION: A plasma processing device includes a chamber and a magnetic field forming unit. The chamber includes a substrate on the upper side. The magnetic field forming unit is arranged to surround the outside of the chamber and includes a plurality of magnetic segments(22) around the substrate. The magnetic field forming unit includes a distance control unit(28) which controls the separation distance between the chamber and the magnetic segments.
|
申请公布号 |
KR20100049292(A) |
申请公布日期 |
2010.05.12 |
申请号 |
KR20080108396 |
申请日期 |
2008.11.03 |
申请人 |
ADP ENGINEERING CO., LTD. |
发明人 |
SON, HYOUNG KYU |
分类号 |
H01L21/3065;H01L21/02 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|