发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PURPOSE: A plasma processing device and a processing method thereof are provided to easily perform a plasma process by controlling a magnetic field according to the kind of the plasma process. CONSTITUTION: A plasma processing device includes a chamber and a magnetic field forming unit. The chamber includes a substrate on the upper side. The magnetic field forming unit is arranged to surround the outside of the chamber and includes a plurality of magnetic segments(22) around the substrate. The magnetic field forming unit includes a distance control unit(28) which controls the separation distance between the chamber and the magnetic segments.
申请公布号 KR20100049292(A) 申请公布日期 2010.05.12
申请号 KR20080108396 申请日期 2008.11.03
申请人 ADP ENGINEERING CO., LTD. 发明人 SON, HYOUNG KYU
分类号 H01L21/3065;H01L21/02 主分类号 H01L21/3065
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