NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to improve an optical extraction efficiency of the device by forming an air layer in the lower side of a buffer layer in order to totally reflect light which is toward to a substrate. CONSTITUTION: An air layer is formed in a buffer layer(120). An n-type nitride semiconductor layer(130) is formed on the buffer layer. An active layer(140) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(150) is formed on the active layer. A p-type electrode(160) is formed on the p-type nitride semiconductor layer. An n-type electrode(170) is formed on the n-type nitride semiconductor layer.