发明名称 |
Image sensor for reduced dark current |
摘要 |
A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n-type peripheral sidewall formed in a p-type substrate region underlying a pixel array region to separate the pixel array region from a peripheral circuitry region of the image sensor. The method and structure also provide improved protection from blooming.
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申请公布号 |
US7713809(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20060580013 |
申请日期 |
2006.10.13 |
申请人 |
APTINA IMAGING CORPORATION |
发明人 |
RHODES HOWARD E.;COLE STEVE |
分类号 |
H01L21/8238;H01L21/82;H01L27/10;H01L27/146;H01L27/148 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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