METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the metal wiring of a semiconductor device is provided to prevent defect on an insulation layer by removing a metal residue on the insulation layer which is generated during a chemical mechanical polishing process. CONSTITUTION: An insulation layer(106) with a wiring formation region(104) on a semiconductor substrate(102). A metal layer(110) is formed to fill the wiring formation region. The metal layer is removed until the insulation layer is exposed. A residue on the insulation layer is removed by a chemical mechanical polishing method or a wet etching method. A capping layer is formed on the insulation layer and the metal layer. The metal layer is a copper layer.