发明名称 |
Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the same |
摘要 |
The invention provides a dynamic random access memory (DRAM) with an electrostatic discharge (ESD) region. The upper portion of the ESD plug is metal, and the lower portion of the ESD plug is polysilicon. This structure may improve the mechanical strength of the ESD region and enhance thermal conductivity from electrostatic discharging. In addition, the contact area between the ESD plugs and the substrate can be reduced without increasing aspect ratio of the ESD plugs. The described structure is completed by a low critical dimension controlled patterned photoresist, such that the processes and equipments are substantially maintained without changing by a wide margin.
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申请公布号 |
US7714445(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20070951274 |
申请日期 |
2007.12.05 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HSIAO CHING-NAN;CHUANG YING-CHENG;HUANG CHUNG-LIN;CHIU SHIH-YANG |
分类号 |
H01L23/552;H01L21/768 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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