Field effect transistor having nitride semiconductor layer

摘要

A field effect transistor includes a nitride semiconductor layer; an InxAlyGa1-x-yN layer (wherein 0<x<1, 0<y<1 and 0<x+y<1) formed on the nitride semiconductor layer; and a source electrode and a drain electrode formed on and in contact with the InxAlyGa1-x-yN layer. The lower ends of the conduction bands of the nitride semiconductor layer and the InxAlyGa1-x-yN layer are substantially continuous on the interface therebetween.