发明名称 |
Method of manufacturing semiconductor device |
摘要 |
Provided is a method of manufacturing a semiconductor device including a high-k dielectric thin layer formed using an interfacial reaction. The method includes the steps of: forming an oxide layer on a silicon substrate; depositing a metal layer on the oxide layer to form a metal silicate layer using an interfacial reaction between the oxide layer and the metal layer; forming a metal gate by etching the metal silicate layer and the metal layer; and forming a lightly doped drain (LDD) region and source and drain regions in the silicon substrate after forming the metal gate. In this method, a semiconductor device having high quality and performance can be manufactured by a simpler process at lower cost.
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申请公布号 |
US7713826(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20080045797 |
申请日期 |
2008.03.11 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHOI CHEL JONG;JANG MOON GYU;KIM YARK YEON;JUN MYUNG SIM;KIM TAE YOUB |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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