METHOD OF MANUFACTURING MULTI-BIT-PER CELL NON-VOLATILE MEMORY CELL AND NOR TYPE MEMORY ARCHITECTURE USING THEREOF

摘要

PURPOSE: A manufacturing method of a non-volatile memory cell and a NOR type memory architecture thereof are provided to improve whole memory integration degree by using a non-volatile memory. CONSTITUTION: A character-I like active fin forming a source/drain region on both sides is patterned(S110). An oxide film is deposited(S120). A first oxide film is formed in the active fin region(S130). A character-T like gate is patterned by using a hard mask pattern as the mask on a deposited polysilicon. A second oxide film is formed in the gate region(S150). A charge trapped layer is formed between the first oxide film and the second oxide film(S160).