发明名称 CHEMICAL ETCHING COMPOSITION FOR METAL LAYER
摘要 PURPOSE: An etching composition for metal layer is provided to easily enable etching monolayer of AZO or silver and bilayer or trilayer thereof at the same time without residue. CONSTITUTION: An etching composition for monolayer of AZO or silver and bilayer or trilayer thereof contains 0.5-15 weight% of hydrogen peroxide, 1-15 weight% of nitrate, 0.05-10 weight% of organic acid, inorganic acid or mixture thereof, 0.1-10 weight% of organic acid salt, and residual amount of water. The nitrate is selected from potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate and ferric nitrate. The organic acid salt is selected from formic acid, acetic acid, oxalic acid, and malonic acid.
申请公布号 KR20100048144(A) 申请公布日期 2010.05.11
申请号 KR20080107172 申请日期 2008.10.30
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 LEE, JAE YOUN;LEE, CHANG MO;YANG, SEUNG JAE
分类号 C09K13/06 主分类号 C09K13/06
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