发明名称 |
Element substrate and a light emitting device |
摘要 |
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a driving transistor also serves as an erasing transistor and the driving transistor is operated in a saturation region. The gate of the driving transistor is connected to an erasing scan line and it can be selected whether or not to flow current by a potential of the erasing scan line. In addition, a current controlling transistor which operates in a linear region is connected in series to the driving transistor, thus a video signal transmitting a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
|
申请公布号 |
US7714818(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20070701223 |
申请日期 |
2007.02.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OSAME MITSUAKI;ANZAI AYA;YAMAZAKI YU |
分类号 |
G09G3/32;H01L51/50;G09G3/20;G09G3/30;G09G5/00;H01L27/32;H05B33/14 |
主分类号 |
G09G3/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|