Ultra-thin substrate for semiconductor package, and fabrication method of the same, fabrication method for semiconductor device thereby

摘要

A ultra-thin semiconductor package substrate, a manufacturing method of a semiconductor package substrate, and a manufacturing method of a semiconductor device by using the same are provided to reduce a thickness of a substrate by eliminating a CCL(Copper-Clad Laminate). A gold plating process and a nickel plating process are sequentially performed to fill a region from which a first photoresist layer is removed. A copper-plated layer is electrically connected with a nickel-plated layer exposed through a second photoresist region. The copper-plated layer is formed to cover a surface including a second photoresist(130). The copper-plated layer includes a flat top surface. A third photoresist layer is formed on the copper-plated layer. The exposed copper-plated layer is removed by performing an etch process using a third photoresist. A part of a fourth photoresist layer is removed by an exposure-development process in order to expose a part of a circuit pattern. A fourth photoresist(160) is removed to connect electrically the nickel-plated layer and the gold-plated layer with the exposed circuit pattern.