发明名称 Semiconductor integrated circuit device
摘要 Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively. There is provided a differential amplifier circuit in which a bias voltage is supplied to a noninverting input terminal thereof and an inverting input terminal thereof is connected to an analog current output node which is the drains connected together of one sides of the first differential MOSFETs, and a resistive element is provided between the inverting input terminal and an output terminal thereof. A converted analog output voltage is generated at the output terminal, and a voltage equal to the bias voltage is supplied to drains of the other sides of the first differential MOSFETs.
申请公布号 US7714264(B2) 申请公布日期 2010.05.11
申请号 US20080334475 申请日期 2008.12.14
申请人 RENESAS TECHNOLOGY CORP. 发明人 MOCHIZUKI TOSHIO;AMBO TAKANOBU
分类号 H01L27/00;H03M1/18;H03M1/74;H04N1/028;H04N5/335;H04N5/357;H04N5/378 主分类号 H01L27/00
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