MONITORING APPARATUS FOR PLASMA PROCESS AND METHOD OF THE SAME

摘要

PURPOSE: An apparatus and a method for monitoring a plasma process are provided to reduce the generation of failure during a wafer etching or deposition process by sensing the abnormal state of plasma. CONSTITUTION: A red-green-blue(RGB) sensor(200) is arranged on the view port side(140) of a plasma process chamber(100) in which an etching and a deposition process for a semiconductor are performed. The RGB sensor measures light generated from plasma in the plasma process chamber based on red, green and blue colors. A master board(300) is connected to the RGB sensor and processes signal from the RGB sensor. The master board controls the operation of the process chamber and displays the state of the operation. An adapter firmly fixes the RGB sensor on the lateral side of the process chamber.