| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to ensure the stable operation of a floating body transistor by reducing the thickness of a silicon layer in order to increase the volume of the floating body transistor. CONSTITUTION: A sacrificial layer(210) is formed in a silicon active region(201). A pin region(211) is formed on a silicon-on-insulator substrate by a silicon epitaxial growth. A gate pattern is formed to cover the pin region. A conductive region is formed in a floating body region which is located under the both of a gate pattern. The remained sacrificial layer is removed.</p> |
