METHOD OF FORMING SEMICONDUCTOR DEVICE USING THE ALO MASK

摘要

PURPOSE: A method for forming a semiconductor device with an aluminum oxide layer mask is provided to etch vertical gate structures by forming a mask pattern which is resistant to an etching gas. CONSTITUTION: A first gate selection line(320) and a second gate selection line(710) are formed on a semiconductor substrate(1100). A gate structure(10) with a cell gate structure is formed between the first gate selection line and the second gate selection line. The gate structure includes one of a metal layer, a poly silicon layer, an oxide silicon layer, a semiconductor layer and an insulation layer. A mask pattern(100) based on an aluminum oxide layer is formed on the gate structure. The gate structure is etched using the mask pattern as an etching mask. A channel hole which passes through the each layer of the gate structure is formed.