| 摘要 |
<p>PURPOSE: A semiconductor device is provided to accumulate plasma induced damages(PID), which is generated during a high density plasma(HDP) insulation layer formation process, in the insulation layer of a gate by forming the HDP insulation layer on a bit line. CONSTITUTION: An active region is defined on a semiconductor substrate(100). A gate(130) which functions as a first terminal is formed on the active region. A source region and a drain region(140) which function as a second terminal are formed on the both side of the gate. A first contact(150) is formed on the gate. A first conductive pattern in a comb shape is formed on the first contact.</p> |
