| 摘要 |
<p>PURPOSE: A method for manufacturing a poly-silicon thin film transistor is provided to realize high mobility and obtain uniformity. CONSTITUTION: An amorphous silicon film and an impurity amorphous silicon film are formed by a crystallization silicon film(18c) and an impurity crystallization silicon film(18d). The crystallization silicon film, the impurity crystallization silicon film and a heat transfer film(22a) are patterned. A semiconductor layer, an ohmic contact layer and source/drain electrodes are formed. A protective film in which a contact hole is included is formed on a substrate on which the source/drain electrodes are formed. A pixel electrode is formed on the protective film in which the contact hole is formed.</p> |
