| 发明名称 |
Method of controlling the breakdown voltage of BSCRs and BJT clamps |
| 摘要 |
In a BSCR or BJT ESD clamp, the breakdown voltage and DC voltage tolerance are controlled by controlling the size of the collector of the BJT device by masking part of the collector.
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| 申请公布号 |
US7714355(B1) |
申请公布日期 |
2010.05.11 |
| 申请号 |
US20050312704 |
申请日期 |
2005.12.20 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORP |
发明人 |
VASHCHENKO VLADISLAV;SADOVNIKOV ALEXEI;HOPPER PETER J.;STRACHAN ANDY |
| 分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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