HIGH-POWER SEMICONDUCTOR DEVICE HAVING IMPROVED TRANSCONDUCTANCE

摘要

PURPOSE: A high-power semiconductor device including improved transconductance is provided to obtain a stable breakdown voltage by forming the gate insulation layers of the semiconductor device with different thicknesses. CONSTITUTION: A first conductive semiconductor substrate(100) is prepared. A gate electrode(130) is formed on the upper side of the semiconductor substrate. A second conductive source region(140a) is formed on one side of the gate electrode. A second conductive drain region(140b) is formed on the other side of the gate electrode. A first gate insulation layer(120a) is interposed between the semiconductor substrate and the gate electrode. A second gate insulation layer(120b) is adjacent to the drain region. A third gate insulation layer(120c) is located between the first and the second gate insulation layers.