| 摘要 |
A semiconductor device includes a pair of transistors formed in a first conductive type semiconductor substrate. Each of the transistors contains a collector region of a second conductive type, opposite to the first conductive type, formed in the semiconductor substrate, a base region of the first conductive type formed in the collector region, and an emitter region of the second conductive type formed in the base region, the collector region of one transistor of the pair of transistors being separated from that of the other transistor. The semiconductor device further includes a first region of the first conductive type formed between the collector regions of the pair of transistors, and a buried layer of the second conductive type formed in the semiconductor substrate under the collector region of one transistor of the pair of transistors to connect the collector regions of the transistors therethrough.
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