| 摘要 |
1308477 Thin film circuits WESTERN ELECTRIC CO Inc 21 May 1970 [23 May 1969] 24563/70 Heading H1R A method for forming a thin film cross-over comprises the steps of depositing three conductors on a substrate, depositing a thin film of etchable material on top of the intermediate conductor, forming an upper conductive layer on the thin film such that it electrically connects the outer two conductors and crosses over the intermediate conductor, the upper conductive layer containing a compressively stressed layer so that when the thin film of etchable material is completely etched away, the stressed layer expands and arches the upper conductive layer away from the middle conductor. The substrate may be silicon, and the three conductors may all consist of a titanium layer, a platinum layer and a gold layer. An oxidizable metal, such as zirconium, may be deposited on to the conductors prior to the deposition of the etchable layer, which can be subsequently oxidized by heating to form a protective dielectric layer. The etchable material may be copper, and the upper conductive layer may consist of two layers of gold separated by a layer of compressively stressed rhodium, all deposited electrolytically. The copper layer may be etched using concentrated ferric nitrate. |
