| 摘要 |
<p>PURPOSE: A method of fabricating a semiconductor device is provided to improve reproducibility of a capacitor by forming sidewalls of the same thickness on both sides of a bit line and on both sides of a cap layer. CONSTITUTION: A first interlayer dielectric(13) is formed on a semiconductor substrate(11) having a transistor including an impurity region. A first contact hole is formed by patterning the first interlayer dielectric. A plug(17) is formed within the first contact hole. A bit line(19), a cap layer(21), and first and second sacrificial layers are formed by patterning the first interlayer dielectric. A second interlayer dielectric(27) is formed on the first interlayer dielectric. An etch process is performed to leave residues of the first sacrificial layer on a top part of the cap layer by using a line type storage contact mask. The line type storage contact mask is removed therefrom and the residues of the first sacrificial layer are removed from the top part of the cap layer. The cap layer is covered with an insulating material. A sidewall(31) is formed by an etch-back process.</p> |
