| 发明名称 |
Eased gate voltage restriction via body-bias voltage governor |
| 摘要 |
An arrangement, to ease restriction upon gate voltage (Vgg) magnitudes for a dynamic threshold MOS (DTMOS) transistor, may include: an MOS transistor including a gate and a body; and a body-bias-voltage (Vbb) governor (Vbb-governor) circuit to provide a governed version of Vgg of the MOS transistor to the body of the MOS transistor as a dynamic body bias-voltage (Vbb).
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| 申请公布号 |
US7714638(B2) |
申请公布日期 |
2010.05.11 |
| 申请号 |
US20070987969 |
申请日期 |
2007.12.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU HYUKJU;KANG HEESUNG;KIM KYUNGSOO |
| 分类号 |
H01L27/01;H01L27/085;H01L27/108;H03K19/00;H03K19/017;H03K19/094;H03K19/0948 |
主分类号 |
H01L27/01 |
| 代理机构 |
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