| 摘要 |
PURPOSE: A method for forming a device isolation layer of a semiconductor device is provided to improve a junction leakage by reducing stress when forming a trench oxide film liner in an STI(Shallow Trench Isolation) forming process. CONSTITUTION: A pad oxide film(110) and a pad nitride film(130) are successively formed on a silicon substrate. A shallow trench is formed by etching a pad oxide film, a pad nitride film, and a silicon substrate according to a photoresist pattern. A trench oxide film liner(150) is formed by dry-etching the front side of the shallow trench. A chloridation catalyst is supplied to a furnace when forming the trench oxide film liner. The concentration of the chloridation catalyst is 10 to 20 %.
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