| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent a void by forming a support layer comprised of a HDP layer and a SOG layer on the outer region of a dummy cell region after forming a lower electrode. CONSTITUTION: A capacitor is formed on a semiconductor substrate with a dummy cell region. A photosensitive pattern exposing an outer region(2000b) of the dummy cell region(2000a) is formed. A support layer is formed on the outer region of the dummy cell region. The support layer is etched using the photosensitive pattern as a mask.
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