A crystal-growth substrate and a ZnO-containing compound semiconductor device

摘要

In a method of growing a ZnO-containing compound semiconductor single crystal, on a compound single crystal layer of a hexagonal crystal structure having a plurality of (0001) surfaces aligned in a sequence of terraces along a direction of a-axis, a ZnO-containing compound single crystal of a hexagonal crystal structure is grown, having an inclination from the c-axis toward the direction of the a-axis.